Electrical properties of sol-gel processed PLZT thin films
Identifieur interne : 000199 ( Main/Exploration ); précédent : 000198; suivant : 000200Electrical properties of sol-gel processed PLZT thin films
Auteurs : RBID : ISTEX:10853_1994_Article_BF00354027.pdfAbstract
Sol-gel processed lanthanum-modified lead zirconate titanate (PLZT) thin films consisting of two different perovskite phase contents were fabricated on indium tin oxide coated Corning 7059 glass substrates with two different heating schedules: direct insertion at 650° C for 30 min and at 500° C for 2h. Optical transmittance spectra, polarization versus electric field curves, relative dielectric constant versus frequency and capacitance versus d.c. bias voltage curves of the samples were investigated. The samples showed a good transparency of over 70% and interference oscillation. A thin film consisting of mainly perovskite phase showed a slim loop hysteresis in the polarization versus electric field curve and in the capacitance versus d.c. bias voltage curve, indicating the presence of ferroelectric domains, but a film consisting of mainly pyrochlore phase did not. The dielectric constant and loss factor of the thin film consisting of mainly perovskite phase were about 90 and about 0.2, respectively, at relatively low frequency and showed dispersion of the dipolar polarization of permanent dipole moment in the ferroelectric perovskite phase in the frequency range between 10 kHz and 1 MHz.
DOI: 10.1007/BF00354027
Links toward previous steps (curation, corpus...)
Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title>Electrical properties of sol-gel processed PLZT thin films</title><author><name>J. M. Kim</name><affiliation wicri:level="1"><mods:affiliation>Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Kusong Dong 373-1, Yusung Gu, Taejon, Korea</mods:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Kusong Dong 373-1, Yusung Gu, Taejon</wicri:regionArea><wicri:noRegion>Taejon</wicri:noRegion></affiliation></author><author><name>D. S. Yoon</name><affiliation wicri:level="1"><mods:affiliation>Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Kusong Dong 373-1, Yusung Gu, Taejon, Korea</mods:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Kusong Dong 373-1, Yusung Gu, Taejon</wicri:regionArea><wicri:noRegion>Taejon</wicri:noRegion></affiliation></author><author><name>K. No</name><affiliation wicri:level="1"><mods:affiliation>Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Kusong Dong 373-1, Yusung Gu, Taejon, Korea</mods:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Kusong Dong 373-1, Yusung Gu, Taejon</wicri:regionArea><wicri:noRegion>Taejon</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10853_1994_Article_BF00354027.pdf</idno><date when="1994">1994</date><idno type="doi">10.1007/BF00354027</idno><idno type="wicri:Area/Main/Corpus">000492</idno><idno type="wicri:Area/Main/Curation">000492</idno><idno type="wicri:Area/Main/Exploration">000199</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Sol-gel processed lanthanum-modified lead zirconate titanate (PLZT) thin films consisting of two different perovskite phase contents were fabricated on indium tin oxide coated Corning 7059 glass substrates with two different heating schedules: direct insertion at 650° C for 30 min and at 500° C for 2h. Optical transmittance spectra, polarization versus electric field curves, relative dielectric constant versus frequency and capacitance versus d.c. bias voltage curves of the samples were investigated. The samples showed a good transparency of over 70% and interference oscillation. A thin film consisting of mainly perovskite phase showed a slim loop hysteresis in the polarization versus electric field curve and in the capacitance versus d.c. bias voltage curve, indicating the presence of ferroelectric domains, but a film consisting of mainly pyrochlore phase did not. The dielectric constant and loss factor of the thin film consisting of mainly perovskite phase were about 90 and about 0.2, respectively, at relatively low frequency and showed dispersion of the dipolar polarization of permanent dipole moment in the ferroelectric perovskite phase in the frequency range between 10 kHz and 1 MHz.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="56233e6a04efefdf6b7573b7c6f39c8119a5aa08"><titleInfo lang="eng"><title>Electrical properties of sol-gel processed PLZT thin films</title></titleInfo><name type="personal"><namePart type="given">J. M.</namePart><namePart type="family">Kim</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Kusong Dong 373-1, Yusung Gu, Taejon, Korea</affiliation></name><name type="personal"><namePart type="given">D. S.</namePart><namePart type="family">Yoon</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Kusong Dong 373-1, Yusung Gu, Taejon, Korea</affiliation></name><name type="personal"><namePart type="given">K.</namePart><namePart type="family">No</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Ceramic Science and Engineering, Korea Advanced Institute of Science and Technology, Kusong Dong 373-1, Yusung Gu, Taejon, Korea</affiliation></name><typeOfResource>text</typeOfResource><genre>Papers</genre><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1993-01-26</dateCreated><dateCaptured encoding="w3cdtf">1994-03-21</dateCaptured><dateValid encoding="w3cdtf">2004-09-04</dateValid><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Sol-gel processed lanthanum-modified lead zirconate titanate (PLZT) thin films consisting of two different perovskite phase contents were fabricated on indium tin oxide coated Corning 7059 glass substrates with two different heating schedules: direct insertion at 650° C for 30 min and at 500° C for 2h. Optical transmittance spectra, polarization versus electric field curves, relative dielectric constant versus frequency and capacitance versus d.c. bias voltage curves of the samples were investigated. The samples showed a good transparency of over 70% and interference oscillation. A thin film consisting of mainly perovskite phase showed a slim loop hysteresis in the polarization versus electric field curve and in the capacitance versus d.c. bias voltage curve, indicating the presence of ferroelectric domains, but a film consisting of mainly pyrochlore phase did not. The dielectric constant and loss factor of the thin film consisting of mainly perovskite phase were about 90 and about 0.2, respectively, at relatively low frequency and showed dispersion of the dipolar polarization of permanent dipole moment in the ferroelectric perovskite phase in the frequency range between 10 kHz and 1 MHz.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>JOURNAL OF MATERIALS SCIENCE</title></titleInfo><titleInfo><title>Journal of Materials Science</title><partNumber>Year: 1994</partNumber><partNumber>Volume: 29</partNumber><partNumber>Number: 24</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1994-01-01</dateIssued><copyrightDate encoding="w3cdtf">1994</copyrightDate></originInfo><subject usage="primary"><topic>Engineering</topic><topic>Polymer Sciences</topic><topic>Industrial Chemistry/Chemical Engineering</topic><topic>Mechanics</topic><topic>Materials Processing, Characterization, and Design</topic></subject><identifier type="issn">0022-2461</identifier><identifier type="issn">Electronic: 1573-4803</identifier><identifier type="matrixNumber">10853</identifier><identifier type="local">IssueArticleCount: 39</identifier><recordInfo><recordOrigin>Chapman & Hall, 1994</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00354027</identifier><identifier type="matrixNumber">Art36</identifier><identifier type="local">BF00354027</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>6599</start><end>6603</end></extent></part><recordInfo><recordOrigin>Chapman & Hall, 1994</recordOrigin><recordIdentifier>10853_1994_Article_BF00354027.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV1/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000199 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000199 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV1
|flux= Main
|étape= Exploration
|type= RBID
|clé= ISTEX:10853_1994_Article_BF00354027.pdf
|texte= Electrical properties of sol-gel processed PLZT thin films
}}
| This area was generated with Dilib version V0.5.81. |  |